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 (R)
BF420
SMALL SIGNAL NPN TRANSISTOR
PRELIMINARY DATA
Ordering Code BF420 BF420-AP
s
Marking BF420 BF420
Package / Shipment TO-92 / Bulk TO-92 / Ammopack
s
s
SILICON EPITAXIAL PLANAR NPN HIGH VOLTAGE TRANSISTOR TO-92 PACKAGE SUITABLE FOR THROUGH-HOLE PCB ASSEMBLY THE PNP COMPLEMENTARY TYPE IS BF421 TO-92 Bulk TO-92 Ammopack
APPLICATIONS s VIDEO AMPLIFIER CIRCUITS (RGB CATHODE CURRENT CONTROL) s TELEPHONE WIRELINE INTERFACE (HOOK SWITCHES, DIALER CIRCUITS)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol V CBO V CEO V EBO IC I CM P tot T stg Tj Parameter Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (t p < 5 ms) Total Dissipation at T C = 25 C Storage Temperature Max. Operating Junction Temperature
o
Value 300 300 5 500 600 830 -65 to 150 150
Unit V V V mA mA mW
o o
C C
February 2003
1/5
BF420
THERMAL DATA
R thj-amb * Thermal Resistance Junction-Ambient R thj-Case * Thermal Resistance Junction-Case Max Max 150 50
o o
C/W C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol I CBO Parameter Collector Cut-off Current (I E = 0) Emitter Cut-off Current (I C = 0) Test Conditions V CB = 200 V V CB = 200 V V CB = 300 V V EB = 5 V I C = 10 mA 300 T C = 150 o C Min. Typ. Max. 10 10 100 50 Unit nA A A nA V
I EBO
V (BR)CEO Collector-Emitter Breakdown Voltage (I B = 0) V (BR)CBO Collector-Base Breakdown Voltage (I E = 0) Emitter-Base Breakdown Voltage (I C = 0) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain Transition Frequency Collector-Base Capacitance
I C = 100 A
300
V
V (BR)EBO
I E = 100 A
5
V
V CE(sat) V BE(sat) h FE fT C CBO C EBO
I C = 30 mA I C = 30 mA I C = 25 mA
I B = 5 mA I B = 5 mA V CE = 20 V f =20 MHz f = 1MHz 50 60 6 22
0.6 1.2
V V
I C = 10 mA V CE = 10 V IE = 0 V CB = 10 V
MHz pF pF
Emitter-Base IC = 0 Capacitance Pulsed: Pulse duration = 300 s, duty cycle 2 %
V EB = 2 V f = 1MHz
2/5
BF420
TO-92 MECHANICAL DATA
mm MIN. A b D E e e1 L R S1 W V 4.32 0.36 4.45 3.30 2.41 1.14 12.70 2.16 1.14 0.41 4 degree TYP. MAX. 4.95 0.51 4.95 3.94 2.67 1.40 15.49 2.41 1.52 0.56 6 degree MIN. 0.170 0.014 0.175 0.130 0.095 0.045 0.500 0.085 0.045 0.016 4 degree inch TYP. MAX. 0.195 0.020 0.194 0.155 0.105 0.055 0.609 0.094 0.059 0.022 6 degree
DIM.
3/5
BF420
TO-92 AMMOPACK SHIPMENT (Suffix"-AP") MECHANICAL DATA
DIM. A1 T T1 T2 d P0 P2 F1,F2 delta H W W0 W1 W2 H H0 H1 D0 t L I1 delta P mm TYP. inch TYP.
MIN.
12.50 5.65 2.44 -2.00 17.50 5.70 8.50 18.50 15.50 3.80
12.70 6.35 2.54 18.00 6.00 9.00
16.00 4.00
MAX. 4.80 3.80 1.60 2.30 0.48 12.90 7.05 2.94 2.00 19.00 6.30 9.25 0.50 20.50 16.50 25.00 4.20 0.90 11.00 1.00
MIN.
0.492 0.222 0.096 -0.079 0.689 0.224 0.335 0.728 0.610 0.150
0.500 0.250 0.100 0.709 0.236 0.354
0.630 0.157
MAX. 0.189 0.150 0.063 0.091 0.019 0.508 0.278 0.116 0.079 0.748 0.248 0.364 0.020 0.807 0.650 0.984 0.165 0.035 0.433 0.039
3.00 -1.00
0.118 -0.039
4/5
BF420
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 2003 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com
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